Abstract. In the work the volt-farad characteristics of PdSi-Si contact have been studied. The possibility for definition of series of important parameters for Pd, Si and PdSi by means of these characteristics has been considered. The linearity of the experimental dependence of 1/C2 on a voltage and equability of distribution for impurities in the near surface area of a semiconductor have been established. The main advantage of this method is the possibility  and other characteristics, which can significantly increase accuracy.Conducted studies of the dependence of capacitance on voltage showed that in the range of 300 -106 Hz the capacitance practically does not depend on frequency