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Absorption and Band Structure Modification in Boron-Substituted GaSe
Optical properties Layered chalcogenide semiconductors Band gap narrowing Visible and near-infrared photodetection Electronic band structure modification
Lamiya Balayeva BalayevaAli Guseinov
Received: 2025-09-29 Revised: 2025-11-07 Accepted: 2025-11-18 Published: 2026-02-03
Doi: https://doi.org/10.30546/09081.2025.001.8005
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Abstract
Volume 9 Issue 1
Page 35-42